Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate

T.V. Chandrasekhar Rao, Jarek Antoszewski, Lorenzo Faraone, B. Rodriguez, E. Plis, S. Krishna

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.
    Original languageEnglish
    Pages (from-to)012121-1 to 012121-3
    JournalApplied Physics Letters
    Volume92
    Issue number1
    DOIs
    Publication statusPublished - 2008

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