Jarek Antoszewski

PhD Warsaw, Associate Professor

  • The University of Western Australia (M018), 35 Stirling Highway,

    6009 Perth

    Australia

  • 0 Citations
  • 0 h-Index
19952016

Research output per year

If you made any changes in Pure these will be visible here soon.

Personal profile

Research expertise keywords

  • IR technology
  • Micro-electromechanical systems (MEMS) technology
  • Micro-electronics
  • Semiconductor device technology
  • Semiconductor material characterisation

Fingerprint Dive into the research topics where Jarek Antoszewski is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 3 Similar Profiles

Research Output

Hole Transport in Arsenic-Doped Hg1-xCd xTe with x = 0.5

Umana-Membreno, G. A. A., Kala, H., Bains, S., Akhavan, N. D., Antoszewski, J., Maxey, C. D. & Faraone, L., 2016, In : Journal of Electronic Materials. 45, 9, p. 4686-4691 6 p.

Research output: Contribution to journalArticleResearchpeer-review

  • nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier

    Benyahia, D., Martyniuk, P., Kopytko, M., Antoszewski, J., Gawron, W., Madejczyk, P., Rutkowski, J., Gu, R. & Faraone, L., 2016, In : Optical and Quantum Electronics. 48, 3, p. 1-8 8 p.

    Research output: Contribution to journalArticleResearchpeer-review

  • Atomistic Modelling of p-channel Junctionless Silicon Nanowire Transistor: k.p approach

    Akhavan, N., Umana Membreno, G. A., Antoszewski, J. & Faraone, L., 2014, Proceedings of the 2014 International Conference on Nanoscience and Nanotechnology (ICONN). United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1. p. 17-20

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  • Sub-band modulated electronic transport in planar fully-depleted silicon-on-insulator MOSFETs

    Umana Membreno, G. A., Chang, S-J., Bawedin, M., Antoszewski, J., Cristoloveanu, S. & Faraone, L., 2014, COMMAD 2014 Conference Proceedings. United States of America: IEEE, Institute of Electrical and Electronics Engineers, Vol. 1. p. 294-297

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

    Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe

    Umana-Membreno, G. A., Kala, H., Antoszewski, J., Ye, Z. H., Hu, W. D., Ding, R. J., Chen, X. S., Lu, W., He, L., Dell, J. & Faraone, L., 2013, In : Journal of Electronic Materials. 42, 11, p. 3108-3113

    The University of Western Australia

    Research output: Contribution to journalArticleResearchpeer-review